GRADED OR STEPPED ENERGY BAND-GAP-INSULATOR MIS STRUCTURES (GI-MIS OR SI-MIS)

被引：16

作者：

DIMARIA, DJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5826 / 5829

页数：4

共 20 条

[11] ELECTRICALLY ALTERABLE AVALANCHE-INJECTION-TYPE MOS READ-ONLY MEMORY WITH STACKED-GATE STRUCTURE [J].

IIZUKA, H ;

MASUOKA, F ;

SATO, T ;

ISHIKAWA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :379-387

[12] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN [J].

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1613-1616

[13]

JOYCE RJ, 1967, THIN SOLID FILMS, V1, P481

[14] INTERFACIAL DOPANTS FOR DUAL-DIELECTRIC, CHARGE-STORAGE CELLS [J].

KAHNG, D ;

SUNDBURG, WJ ;

BOULIN, DM ;

LIGENZA, JR .

BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09) :1723-1739

[15] DSA-TYPE NONVOLATILE MEMORY TRANSISTOR WITH SELF-ALIGNED GATES [J].

KIKUCHI, M ;

OHYA, S ;

YAMAGISHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :49-54

[16] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J].

SINHA, AK ;

LEVINSTEIN, HJ ;

SMITH, TE ;

QUINTANA, G ;

HASZKO, SE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :601-608

[17]

SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9

[18] DIFFERENTIAL STUDIES OF DUAL-DIELECTRIC CHARGE-STORAGE CELLS [J].

THORNBER, KK ;

KAHNG, D ;

BOULIN, DM ;

NEPPELL, CT ;

SUNDBURG, WJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4047-4063

[19] ELECTRON-ELECTRON EFFECTS IN WRITING AND ERASING OF DUAL-DIELECTRIC CHARGE-STORAGE CELLS [J].

THORNBER, KK ;

KAHNG, D .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :131-133

[20] ELECTRON-TRAPPING CHARACTERISTICS OF W IN SIO2 [J].

YOUNG, DR ;

DIMARIA, DJ ;

BOJARCZUK, NA .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3425-3427

← 1 2 →