GRADED OR STEPPED ENERGY BAND-GAP-INSULATOR MIS STRUCTURES (GI-MIS OR SI-MIS)

被引：16

作者：

DIMARIA, DJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5826 / 5829

页数：4

共 20 条

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ARNETT, PC ;

DIMARIA, DJ .

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[3]

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[4] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4073-4077

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DIMARIA, DJ ;

ARNETT, PC .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) :227-244

[6] CENTROID LOCATION OF IMPLANTED IONS IN SIO2 LAYER OF MOS STRUCTURES USING PHOTO IV TECHNIQUE [J].

DIMARIA, DJ ;

YOUNG, DR ;

DEKEERSMAECKER, RF ;

HUNTER, WR ;

SERRANO, CM .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5441-5444

[7] LIGHT-ACTIVATED STORAGE DEVICE (LASD) [J].

DIMARIA, DJ ;

DEKEERSMAECKER, RF ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) :4655-4659

[8] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].

DONG, D ;

IRENE, EA ;

YOUNG, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :819-823

[9]

FROHMANBENTCHKO.D, 1971, ISSCC DIG TECH PAPER, V15, P80

[10]

GROVE AS, 1967, PHYS TECHNOL S, pCH9

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