CHARGE STATE AND HYDROGEN LEVELS POSITION IN DIFFERENT III-V MATERIALS

被引：11

作者：

OMELJANOVSKY, EM ^{[1
]}

PAKHOMOV, AV ^{[1
]}

POLYAKOV, AY ^{[1
]}

机构：

[1] UN,CTR SCI & TECHNOL,NEW YORK,NY 10017

来源：

PHYSICS LETTERS A | 1989年 / 141卷 / 1-2期

关键词：

D O I：

10.1016/0375-9601(89)90449-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：75 / 77

页数：3

共 20 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2]

BIMBERG D, 1988, PHYSICS SEMICONDUCTO, V1, P541

[3] A UNIVERSAL TREND IN THE BINDING-ENERGIES OF DEEP IMPURITIES IN SEMICONDUCTORS [J].

CALDAS, MJ ;

FAZZIO, A ;

ZUNGER, A .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :671-673

[4] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J].

CAPIZZI, M ;

MITTIGA, A .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :918-920

[5]

CHEVALIER J, 1988, MATERIALS SCI FORUM, P991

[6]

DELERUE C, 1988, PHYSICS SEMICONDUCTO, V1, P533

[7]

DU YC, 1988, MATERIALS SCI FORUM, P1021

[8]

HASEGAWA H, 1986, SEMIINSULATING 3 5 M, P471

[9] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS [J].

JOHNSON, NM ;

BURNHAM, RD ;

STREET, RA ;

THORNTON, RL .

PHYSICAL REVIEW B, 1986, 33 (02) :1102-1105

[10]

JOHNSON NM, 1988, MATERIALS SCI FORUM, P961

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