GAAS SCHOTTKY-BARRIER AVALANCHE DIODES

[1] HAMILTON V, 1968, DAAB0768C0287 CONTR

[2] IRVIN JC, 1966, IEEE T ELECTRON DEVI, VED13, P208

[3] KIM CK, 1969, IEEE T ELECTRON DEVI, VED16

[4] KIM CK, 1969, APPL PHYS LETT

[5] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[6] METAL-SEMICONDUCTOR IMPATT DIODE [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 107 - +

[7] WHEELER AJ, 1967, PRIVATE COMMUNICATIO

[1] HAMILTON V, 1968, DAAB0768C0287 CONTR

[2] IRVIN JC, 1966, IEEE T ELECTRON DEVI, VED13, P208

[3] KIM CK, 1969, IEEE T ELECTRON DEVI, VED16

[4] KIM CK, 1969, APPL PHYS LETT

[5] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[6] METAL-SEMICONDUCTOR IMPATT DIODE [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 107 - +

[7] WHEELER AJ, 1967, PRIVATE COMMUNICATIO