ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS WHICH CONTAIN HIGH-RESISTIVITY REGIONS

被引:33
作者
DILORENZO, JV
MARCUS, RB
LEWIS, R
机构
关键词
D O I
10.1063/1.1660088
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:729 / +
页数:1
相关论文
共 17 条
[1]  
BLAKESLEE AE, 1969, 10550F EC REP
[2]  
CAIRNS B, 1970, ELECTROCHEM SOC M LO
[3]   REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE [J].
COCHRAN, CN ;
FOSTER, LM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :149-154
[4]   A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :445-&
[5]  
COX RH, 1970, ELECTROCHEM SOC M LO
[6]  
DAWSON RW, PRIVATE COMMUNICATIO
[7]  
DILORENZO JV, UNPUBLISHED
[8]   OCCURENCE OF HIGH RESISTANCE LAYER AT VAPOR EPITAXIAL GAAS FILM-SUBSTRATE INTERFACE [J].
HASEGAWA, F ;
SAITO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1125-&
[9]  
JOHNSON W, PRIVATE COMMUNICATIO
[10]   PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].
KNIGHT, JR ;
EFFER, D ;
EVANS, PR .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&