F/TB RATIO DEPENDENCE OF THE PHOTOLUMINESCENT AND ELECTROLUMINESCENT CHARACTERISTICS IN MOCVD-PREPARED ZNS-TBFX GREEN-EMITTING ELECTROLUMINESCENT DEVICES

被引：10
作者：
HIRABAYASHI, K
KOZAWAGUCHI, H
TSUJIYAMA, B
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 04期
关键词：
D O I：
10.1143/JJAP.27.587
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：587 / 591
页数：5
相关论文
共 11 条
[1]  
HIRABAYASHI K, 1986, 1986 C REC INT DISPL, P254
[2]  
HOSHINA T, 1980, JPN J APPL PHYS, V19, P1596
[3]   HOT-ELECTRON IMPACT EXCITATION OF TB3+ LUMINESCENCE IN ZNS - TB3+ THIN-FILMS [J].
KRUPKA, DC .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :476-&
[4]   PROBE LAYER MEASUREMENTS OF ELECTRO-LUMINESCENCE EXCITATION IN AC THIN-FILM DEVICES [J].
MARRELLO, V ;
SAMUELSON, L ;
ONTON, A ;
REUTER, W .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3590-3599
[5]   TB-F EMISSION CENTERS IN ZNS-TB,F THIN-FILM ELECTROLUMINESCENT DEVICES [J].
MIKAMI, A ;
OGURA, T ;
TANAKA, K ;
TANIGUCHI, K ;
YOSHIDA, M ;
NAKAJIMA, S .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :3028-3034
[6]   EFFECTS OF ANNEALING ON ZNS-TB, F ELECTROLUMINESCENT THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING [J].
MITA, J ;
KOIZUMI, M ;
KANNO, H ;
HAYASHI, T ;
SEKIDO, Y ;
ABIKO, I ;
NIHEI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05) :L558-L560
[7]  
MITA J, 1986, 1986 C REC INT DISPL, P250
[8]  
OHNISHI H, 1985, 1985 INT DISPL RES C, P159
[9]   ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE IN SPUTTERED ZNS-TBFX THIN-FILMS [J].
OKAMOTO, K ;
WATANABE, K .
APPLIED PHYSICS LETTERS, 1986, 49 (10) :578-580
[10]  
OKAMOTO K, 1986, 1986 C REC INT DISPL
12