DOSE EFFECTS DURING SOLID-PHASE EPITAXIAL REGROWTH OF BORON-IMPLANTED, GERMANIUM-AMORPHIZED SILICON INDUCED BY RAPID THERMAL ANNEALING

被引：6

作者：

ADEKOYA, WO ^{[1
]}

HAGEALI, M ^{[1
]}

MULLER, JC ^{[1
]}

SIFFERT, P ^{[1
]}

机构：

[1] INST NATL PHYS NUCL & PHYS PARTICULES,CTR RECH NUCL,PHASE LAB,CNRS,VA 292,F-67037 STRASBOURG,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 06期

关键词：

D O I：

10.1063/1.99882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：511 / 513

页数：3

共 14 条

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[2]

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[3]

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[4]

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[8] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J].

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[9] IMPURITY-INDUCED ENHANCEMENT OF THE GROWTH-RATE OF AMORPHIZED SILICON DURING SOLID-PHASE EPITAXY - A FREE-CARRIER EFFECT [J].

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JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :432-438

[10] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J].

LIETOILA, A ;

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4399-4405

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