DOSE EFFECTS DURING SOLID-PHASE EPITAXIAL REGROWTH OF BORON-IMPLANTED, GERMANIUM-AMORPHIZED SILICON INDUCED BY RAPID THERMAL ANNEALING

被引:6
作者
ADEKOYA, WO [1 ]
HAGEALI, M [1 ]
MULLER, JC [1 ]
SIFFERT, P [1 ]
机构
[1] INST NATL PHYS NUCL & PHYS PARTICULES,CTR RECH NUCL,PHASE LAB,CNRS,VA 292,F-67037 STRASBOURG,FRANCE
关键词
D O I
10.1063/1.99882
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:511 / 513
页数:3
相关论文
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