OPTICAL-PROPERTIES OF ETCHED GAAS/GAALAS QUANTUM WIRES AND DOTS

被引：22
作者：
MARZIN, JY
IZRAEL, A
BIROTHEAU, L
机构：
[1] France Telecom, CNET PAB, Laboratoire de Bagneux
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期
关键词：
D O I：
10.1016/0038-1101(94)90362-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show that very narrow wires and dots, exhibiting reduced dimensionality features, can be obtained through etching from a single quantum well structure. The importance of surface cleaning and passivation is emphasized. The low temperature optical data obtained on arrays of wires and dots allow us to estimate quantitatively the size regularity. The peculiar behaviour of the photoluminescence intensity is attributed to huge electrodynamic effects while the predicted intrinsic limitations imposed by slowed-down energy relaxation are not evidenced. We finally present experimental photoluminescence and photoluminescence excitation spectra obtained on single wires, as small as 6 x 25 x 135 nm3.
引用
收藏
页码：1091 / 1096
页数：6
相关论文
共 43 条
[1]   QUANTUM NOISE AND DYNAMICS IN QUANTUM WELL AND QUANTUM WIRE LASERS [J].
ARAKAWA, Y ;
VAHALA, K ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1984, 45 (09) :950-952
[2]   THEORETICAL GAIN OF QUANTUM-WELL WIRE LASERS [J].
ASADA, M ;
MIYAMOTO, Y ;
SUEMATSU, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L95-L97
[3]   NARROW TWO-DIMENSIONAL ELECTRON-GAS CHANNELS IN GAAS/AIGAAS SIDEWALL INTERFACES BY SELECTIVE GROWTH [J].
ASAI, H ;
YAMADA, S ;
FUKUI, T .
APPLIED PHYSICS LETTERS, 1987, 51 (19) :1518-1530
[4]   INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].
BENISTY, H ;
SOTOMAYORTORRES, CM ;
WEISBUCH, C .
PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948
[5]   OPTICAL INVESTIGATION OF THE ONE-DIMENSIONAL CONFINEMENT EFFECTS IN NARROW GAAS/GAALAS QUANTUM WIRES [J].
BIROTHEAU, L ;
IZRAEL, A ;
MARZIN, JY ;
AZOULAY, R ;
THIERRYMIEG, V ;
LADAN, FR .
APPLIED PHYSICS LETTERS, 1992, 61 (25) :3023-3025
[6]   INTERBAND OPTICAL-TRANSITIONS IN SEMICONDUCTOR QUANTUM WIRES - SELECTION-RULES AND ABSORPTION-SPECTRA [J].
BOCKELMANN, U ;
BASTARD, G .
EUROPHYSICS LETTERS, 1991, 15 (02) :215-220
[7]   POLARIZATION-DEPENDENT OPTICAL-WAVE FIELDS IN GRATING STRUCTURES [J].
BOCKELMANN, U .
EUROPHYSICS LETTERS, 1991, 16 (06) :601-606
[8]   ELECTRON RELAXATION IN QUANTUM DOTS BY MEANS OF AUGER PROCESSES [J].
BOCKELMANN, U ;
EGELER, T .
PHYSICAL REVIEW B, 1992, 46 (23) :15574-15577
[9]   PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].
BOCKELMANN, U ;
BASTARD, G .
PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951
[10]   PHOTOLUMINESCENCE FROM A SINGLE GAAS/ALGAAS QUANTUM DOT [J].
BRUNNER, K ;
BOCKELMANN, U ;
ABSTREITER, G ;
WALTHER, M ;
BOHM, G ;
TRANKLE, G ;
WEIMANN, G .
PHYSICAL REVIEW LETTERS, 1992, 69 (22) :3216-3219
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