A THERMODYNAMICAL CALCULATION OF THE TRANSPORT RATE OF ALSB IN A CLOSED-TUBE VAPOR-PHASE GROWTH SYSTEM

被引:3
|
作者
KITAMURA, N
机构
[1] Dept. of Electr. Eng., Suzuka Coll. of Technol.
关键词
D O I
10.1088/0965-0393/3/1/006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The transport rate of AlSb in a closed-tube vapor-phase growth system with iodine as a transport agent was calculated thermodynamically. The calculated maximum transport rate was obtained at an I-2 density of about 0.004 mg cm(-3) in the growth-temperature system of 550-600 degrees C. The calculation was compared with the experimental results for AlxGa1-xSb. The calculated I-2 density that gave the maximum transport rate in the AlSb-growth system qualitatively agreed with the experimental results in the AlxGa1-xSb-growth system.
引用
收藏
页码:65 / 70
页数:6
相关论文
共 50 条
  • [31] INTERPRETATION OF GROWTH OF (111) AND (111) FACES OF GAAS BY VAPOR-PHASE TRANSPORT
    LAPORTE, JL
    CADORET, M
    LEMEN, JF
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE B, 1975, 281 (23): : 603 - 606
  • [32] VAPOR-PHASE EPITAXIAL-GROWTH OF ALAS BY CHLORIDE TRANSPORT METHOD
    HASEGAWA, F
    YAMAMOTO, T
    KATAYAMA, K
    NANNICHI, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) : 1548 - 1553
  • [33] THEORETICAL TREATMENT OF GAAS GROWTH BY VAPOR-PHASE TRANSPORT FOR (001) ORIENTATION
    CADORET, R
    CADORET, M
    JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 142 - 146
  • [34] VAPOR-PHASE GROWTH OF ZNO CRYSTALS IN AN OPEN FLOW SYSTEM
    FISCHER, KJ
    JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) : 139 - 144
  • [35] Zno nanostructures fabricated through a double-tube vapor-phase transport synthesis
    Chen, YX
    Lewis, M
    Zhou, WL
    JOURNAL OF CRYSTAL GROWTH, 2005, 282 (1-2) : 85 - 93
  • [36] HIGH CAPABILITY, QUASI-CLOSED GROWTH SYSTEM FOR ISOTHERMAL VAPOR-PHASE EPITAXY OF (HG,CD)TE
    PIOTROWSKI, J
    NOWAK, Z
    GRUDZIEN, M
    GALUS, W
    ADAMIEC, K
    DJURIC, Z
    JOVIC, V
    DJINOVIC, Z
    THIN SOLID FILMS, 1988, 161 : 157 - 169
  • [37] Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor-Phase Epitaxy
    Yamaguchi, Akira
    Oozeki, Daisuke
    Kawamoto, Naoya
    Takekawa, Nao
    Bulsara, Mayank
    Murakami, Hisashi
    Kumagai, Yoshinao
    Matsumoto, Koh
    Koukitu, Akinori
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (04):
  • [38] PHOTOEXCITATION EFFECTS ON THE GROWTH-RATE IN THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
    NISHIZAWA, J
    KOKUBUN, Y
    SHIMAWAKI, H
    KOIKE, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1939 - 1942
  • [39] RELATIONSHIP BETWEEN DISLOCATION GENERATION, VAPOR-PHASE SUPERSATURATION AND GROWTH-RATE IN INP-LAYERS OBTAINED BY VAPOR-PHASE EPITAXY
    FRIGERI, C
    GLEICHMANN, R
    PELOSI, C
    ATTOLINI, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 10 (03): : 197 - 207
  • [40] VAPOR-PHASE GROWTH OF EPITAXIAL GA1-XINXSB USING OPEN-TUBE FLOW SYSTEM
    NAKATANI, I
    MASUMOTO, K
    JOURNAL OF CRYSTAL GROWTH, 1979, 46 (02) : 205 - 208