HYDROGEN-INDUCED DONOR-TYPE SI/SIO2 INTERFACE STATES

被引：100

作者：

DENIJS, JMM ^{[1
]}

DRUIJF, KG ^{[1
]}

AFANAS'EV, VV ^{[1
]}

VANDERDRIFT, E ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] ST PETERSBURG STATE UNIV, INST PHYS, ST PETERSBURG, RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 19期

关键词：

D O I：

10.1063/1.112696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Study of donor-type Si/SiO2 interfaces states shows that these centers anneal at room temperature when neutral but are stable when charged positively. Moreover, the anneal process is accompanied by the release of H. We propose that the donor states are related to H attached to interfacial network sites, most likely O atoms, constituting electrically active complexes. When positively charged, H is strongly bonded; when neutral H is only weakly attached. In the latter case it can escape and dimerize so that the states disappear. Similar complexes tying down H in a positively charged state would constitute small cross-section hole traps in the bulk of the oxide. (C) 1994 American Institute of Physics.

引用

页码：2428 / 2430

页数：3

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