DEPOSITION OF DIAMOND ON PATTERNED SILICON SUBSTRATES

被引：17

作者：

FLOTER, A

SCHAARSCHMIDT, G

MAINZ, B

LAUFER, S

DEUTSCHMANN, S

HINNEBERG, HJ

机构：

[1] Fakultät für Naturwissenschaften, Technische Universität Chemnitz-Zwickau

来源：

关键词：

SILICON SUBSTRATES; SUBSTRATE BIAS; NUCLEATION AND GROWTH;

D O I：

10.1016/0925-9635(94)00253-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the deposition of diamond on patterned (100) silicon substrates. Trenches rectangular in shape, up to 7 mu m in depth and with aspect ratios (i.e. depth-to-width ratios) up to 4 have been prepared by reactive plasma etching. Diamond deposition has been performed by micro wave-plasma-assisted chemical vapour de position preceded by an in situ bias pretreatment to support nucleation. Scanning electron microscopy studies show a strong dependence of nucleation on ion bombardment conditions. The nucleation density on vertical walls is three to five orders of magnitude less than at all locations in the direction of ion incidence. During diamond deposition following the bias pretreatment the growth of the layer is isotropic. The maximum film thickness which is available within the trenches amounts to half the trench width and does not depend on any other parameters.

引用

页码：930 / 935

页数：6

共 10 条

[1] INVESTIGATION OF THE BIAS NUCLEATION PROCESS IN MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF DIAMOND [J].

BECKMANN, R ;

SOBISCH, B ;

KULISCH, W ;

RAU, C .

[2] MICROSCOPIC INVESTIGATIONS OF SILICON SURFACES PRETREATED FOR USE IN DIAMOND DEPOSITION [J].

FLOTER, A ;

MAINZ, B ;

STIEGLER, J ;

FALKE, U ;

SCHULZE, S ;

DEUTSCHMANN, S ;

SCHAARSCHMIDT, G .

[3] EPITAXIAL NUCLEATION, GROWTH AND CHARACTERIZATION OF HIGHLY ORIENTED, (100)-TEXTURED DIAMOND FILMS ON SILICON [J].

FOX, BA ;

STONER, BR ;

MALTA, DM ;

ELLIS, PJ ;

GLASS, RC ;

SIVAZLIAN, FR .

[4]

FUSSER HJ, 1993, ECS P, V9317, P102

[5] APPROACH OF SELECTIVE NUCLEATION AND EPITAXY OF DIAMOND FILMS ON SI(100) [J].

JIANG, X ;

BOETTGER, E ;

PAUL, M ;

KLAGES, CP .

APPLIED PHYSICS LETTERS, 1994, 65 (12) :1519-1521

[6] THE EFFECT OF SUBSTRATE BIAS VOLTAGE ON THE NUCLEATION OF DIAMOND CRYSTALS IN A MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION PROCESS [J].

JIANG, X ;

SIX, R ;

KLAGES, CP ;

ZACHAI, R ;

HARTWEG, M ;

FUSSER, HJ .

[7]

MOLINARI E, 1992, APPL PHYS LETT, V9, P2391

[8] SELECTIVE GROWTH OF DIAMOND USING AN IRON CATALYST [J].

SHIMADA, Y ;

MACHI, Y .

[9] CHEMICAL-VAPOR-DEPOSITION AND CHARACTERIZATION OF SMOOTH (100)-FACETED DIAMOND FILMS [J].

WILD, C ;

KOIDL, P ;

MULLERSEBERT, W ;

WALCHER, H ;

KOHL, R ;

HERRES, N ;

LOCHER, R ;

SAMLENSKI, R ;

BRENN, R .

[10] NUCLEATION MECHANISMS OF DIAMOND IN PLASMA CHEMICAL-VAPOR-DEPOSITION [J].

YUGO, S ;

KIMURA, T ;

KANAI, T .

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