INTER-ATOMIC BONDS AND VACANCY FORMATION POTENTIALS IN DOPED ELEMENTARY SEMICONDUCTORS AT DIFFUSION TEMPERATURES

被引：0

作者：

PANTELEEV, VA ^{[1
]}

OKULICH, VI ^{[1
]}

机构：

[1] GORKI ENGN PHYS RES INST,GORKI,USSR

来源：

INORGANIC MATERIALS | 1981年 / 17卷 / 12期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1643 / 1646

页数：4

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