INTER-ATOMIC BONDS AND VACANCY FORMATION POTENTIALS IN DOPED ELEMENTARY SEMICONDUCTORS AT DIFFUSION TEMPERATURES

被引：0
|
作者：
PANTELEEV, VA [1 ]
OKULICH, VI [1 ]
机构：
[1] GORKI ENGN PHYS RES INST,GORKI,USSR
来源：
INORGANIC MATERIALS | 1981年 / 17卷 / 12期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：1643 / 1646
页数：4
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