ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION

被引:102
作者
MORIMOTO, A
MIURA, T
KUMEDA, M
SHIMIZU, T
机构
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D O I
10.1143/JJAP.20.L833
中图分类号
O59 [应用物理学];
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页码:L833 / L836
页数:4
相关论文
共 8 条
[1]   HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J].
FANG, CJ ;
GRUNTZ, KJ ;
LEY, L ;
CARDONA, M ;
DEMOND, FJ ;
MULLER, G ;
KALBITZER, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :255-260
[2]   ELECTRONIC-PROPERTIES OF AMORPHOUS SIXGE1-X-H-FILMS [J].
HAUSCHILDT, D ;
FISCHER, R ;
FUHS, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 102 (02) :563-566
[3]   STUDIES OF THE OSCILLATOR-STRENGTHS OF INFRARED VIBRATIONAL-MODES IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON [J].
JOHN, P ;
ODEH, IM ;
THOMAS, MJK ;
TRICKER, MJ ;
WILSON, JIB .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 104 (02) :607-612
[4]  
NAKAMURA G, 1981, 9TH P INT C AM LIQ S
[5]   PREFERENTIAL ATTACHMENT OF H IN AMORPHOUS HYDROGENATED BINARY SEMICONDUCTORS AND CONSEQUENT INFERIOR REDUCTION OF PSEUDOGAP STATE DENSITY [J].
PAUL, W ;
PAUL, DK ;
VONROEDERN, B ;
BLAKE, J ;
OGUZ, S .
PHYSICAL REVIEW LETTERS, 1981, 46 (15) :1016-1020
[6]   INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON [J].
SHANKS, H ;
FANG, CJ ;
LEY, L ;
CARDONA, M ;
DEMOND, FJ ;
KALBITZER, S .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01) :43-56
[7]  
SHIMIZU T, 1981, AIP C P, V73, P171
[8]   DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS SI1-XGEX ALLOYS [J].
VANDONG, N ;
DANH, TH ;
LENY, JY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :338-341