SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON

被引：35

作者：

BENDER, H

VERHAVERBEKE, S

CAYMAX, M

VATEL, O

HEYNS, MM

机构：

[1] Interuniversity Micro-Electronics Center (IMEC), B-3001 Leuven

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.356478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydrogen termination and surface reconstruction of (100) silicon annealed at high temperature in a H-2 atmosphere at 1 bar is investigated with multiple internal reflection infrared spectroscopy and atomic force microscopy. The surface flattens and becomes 2 X 1 reconstructed and terminated by strained monohydrides. This surface is shown to be very stable against contamination and oxidation.

引用

页码：1207 / 1209

页数：3

共 9 条

[1]

BENDER H, 1993, 3RD P INT S CLEAN TE

[2]

BORLAND J, 1988, SOLID STATE TECHNOL, V31, P111

[3] INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].