LOW-TEMPERATURE ELASTIC CONSTANTS OF GALLIUM ARSENIDE

被引：86
|
作者：
GARLAND, CW
PARK, KC
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 02期
关键词：
D O I：
10.1063/1.1702519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：759 / &
相关论文
共 50 条
  • [41] LOW-PRESSURE AND LOW-TEMPERATURE GALLIUM-ARSENIDE HOMOEPITAXY EMPLOYING INSITU GENERATED ARSINE
    PIHLSTROM, BG
    SHENG, TY
    THOMPSON, LR
    COLLINS, GJ
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (03) : 277 - 279
  • [42] ELASTIC-CONSTANTS OF POLYCRYSTALLINE COPPER AT LOW-TEMPERATURE - RELATIONSHIP TO SINGLE-CRYSTAL ELASTIC-CONSTANTS
    LEDBETTER, HM
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1981, 66 (02): : 477 - 484
  • [43] Low-temperature elastic and piezoelectric constants of paratellurite (α-TeO2)
    Ledbetter, H
    Leisure, RG
    Migliori, A
    Betts, J
    Ogi, H
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) : 6201 - 6206
  • [44] Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
    V. V. Chaldyshev
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    N. A. Bert
    A. E. Kunitsyn
    Yu. G. Musikhin
    V. V. Tret’yakov
    P. Werner
    Semiconductors, 1998, 32 : 1036 - 1039
  • [45] A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide
    P. N. Brunkov
    A. A. Gutkin
    Yu. G. Musikhin
    V. V. Chaldyshev
    N. N. Bert
    S. G. Konnikov
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2005, 39 : 33 - 36
  • [46] GALLIUM-ARSENIDE CHARGE-SENSITIVE PREAMPLIFIER FOR OPERATION IN A WIDE LOW-TEMPERATURE RANGE
    ALESSANDRELLO, A
    BROFFERIO, C
    CAMIN, DV
    GIULIANI, A
    PESSINA, G
    PREVITALI, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 289 (03): : 426 - 437
  • [47] Ultrafast high-intensity nonlinear absorption dynamics in low-temperature grown gallium arsenide
    Siegner, U
    Fluck, R
    Zhang, G
    Keller, U
    APPLIED PHYSICS LETTERS, 1996, 69 (17) : 2566 - 2568
  • [48] LOW-TEMPERATURE LASER ANNEALING OF DEFECTS RESPONSIBLE FOR INFRARED-ABSORPTION IN GALLIUM-ARSENIDE
    DZHIBUTI, ZV
    DOLIDZE, ND
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1991, 17 (05): : 41 - 44
  • [49] THEORY OF THE DEMBER EMF ASSOCIATED WITH LOW-TEMPERATURE INTERBAND-TRANSITIONS IN GALLIUM-ARSENIDE
    BELINICHER, VI
    NOVIKOV, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 757 - 759
  • [50] Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
    Chaldyshev, VV
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    Bert, NA
    Kunitsyn, AE
    Musikhin, YG
    Tret'yakov, VV
    Werner, P
    SEMICONDUCTORS, 1998, 32 (10) : 1036 - 1039
12345