BISTABLE HOT-ELECTRON TRANSPORT IN INP/GAINAS COMPOSITE COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：26
|
作者：
RITTER, D [1 ]
HAMM, RA [1 ]
FEYGENSON, A [1 ]
TEMKIN, H [1 ]
PANISH, MB [1 ]
CHANDRASEKHAR, S [1 ]
机构：
[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期
关键词：
D O I：
10.1063/1.107672
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transport mechanism of electrons across an energy barrier in the collector of a heterojunction bipolar transistor is studied and identified as hot electron thermionic emission. Bistability between tunneling and thermionic emission was observed at 77 K and room temperature. The bistability can be suppressed by n-type doping of the heterointerface vicinity.
引用
收藏
页码：70 / 72
页数：3
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