BISTABLE HOT-ELECTRON TRANSPORT IN INP/GAINAS COMPOSITE COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：26

作者：

RITTER, D ^{[1
]}

HAMM, RA ^{[1
]}

FEYGENSON, A ^{[1
]}

TEMKIN, H ^{[1
]}

PANISH, MB ^{[1
]}

CHANDRASEKHAR, S ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transport mechanism of electrons across an energy barrier in the collector of a heterojunction bipolar transistor is studied and identified as hot electron thermionic emission. Bistability between tunneling and thermionic emission was observed at 77 K and room temperature. The bistability can be suppressed by n-type doping of the heterointerface vicinity.

引用

页码：70 / 72

页数：3

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