A STUDY OF NONEQUILIBRIUM PHENOMENA IN LINEAR-SWEEP MIS CAPACITORS

被引：2

作者：

ZHANG, XM

机构：

[1] Dept. of Electron. Eng., Hangzhou Univ., Zhejiang

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 05期

关键词：

D O I：

10.1088/0268-1242/7/5/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Under an inversion bias and in response to a linear voltage sweep, the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of metal-insulator-semiconductor (MIS) capacitors are described and discussed. An improved model for the generation width is applied, in which the effect of inversion minority carriers on the minority quasi-Fermi level has been taken into account. A differential equation is developed with which to describe the change of the depletion region under the linear voltage sweep. The high-frequency MIS capacitance and gate current are related to the depletion region width. In this way the non-equilibrium characteristics of linear-sweep mis capacitors are described.

引用

页码：654 / 657

页数：4

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