SILICON-CARBIDE POLYTYPES AS EQUILIBRIUM STRUCTURES

被引:49
|
作者
CHENG, C
HEINE, V
JONES, IL
机构
[1] Cavendish Lab., Cambridge Univ.
关键词
D O I
10.1088/0953-8984/2/23/002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The phonon free energy is calculated for several silicon carbide polytypes using a valence overlap shell model. The three most commonly observed polytypes, i.e. (2), (23) and (3), are shown to be thermodynamically stable, with (2) and (3) as the low- and high-temperature phases, respectively, and (23) in between. The long-ranged phonon effect splits the multiphase degeneracy between phases (2) and (3) to which SiC is extremely close at T=0 K, and its stabilises (23) with a significantly large stability region of 500 K. The calculations of the interatomic displacement-displacement correlations demonstrate how the long-ranged interatomic interactions arise from the phonons. The formation theory of longer-period polytypes is also discussed.
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页码:5097 / 5113
页数:17
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