ULTRALONG MINORITY-CARRIER LIFETIMES IN GAAS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引:6
作者
MOLENKAMP, LW
KAMPSCHOER, GLM
DELANGE, W
MAES, JWFM
ROKSNOER, PJ
机构
关键词
D O I
10.1063/1.101192
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1992 / 1994
页数:3
相关论文
共 18 条
[1]   SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].
ASBECK, P .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :820-822
[2]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[3]   COMMENT ON THE TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF MBE-GROWTH-INDUCED DEFECT LINES [J].
EAVES, L ;
SKOLNICK, MS ;
HALLIDAY, DP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (20) :L445-L446
[4]  
GARBUZOV DZ, 1977, SOV PHYS SEMICOND+, V11, P419
[5]  
KUIJPERS EPJ, 1975, J CRYST GROWTH, V31, P165, DOI 10.1016/0022-0248(75)90126-8
[6]   OPTICAL CHARACTERIZATIONS OF UNDOPED GAAS CRYSTALS GROWN BY REDUCED PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].
KUSANO, J ;
SEGAWA, Y ;
IWAI, S ;
AOYAGI, Y ;
NAMBA, S .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1376-1380
[7]   VERY LOW INTERFACE RECOMBINATION VELOCITY IN (AL,GA)AS HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
MOLENKAMP, LW ;
VANTBLIK, HFJ .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :4253-4256
[8]   NEW PHOTO-LUMINESCENCE LINES IN GAAS-LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
ROTH, AP ;
GOODCHILD, RG ;
CHARBONNEAU, S ;
WILLIAMS, DF .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3427-3430
[9]   EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD [J].
TAKAGISHI, S ;
MORI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L795-L797
[10]   EPITAXIAL-GROWTH OF HIGH-PURITY GAAS BY LOW-PRESSURE MOCVD [J].
TAKAGISHI, S ;
MORI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L100-L102