共 18 条
[3]
COMMENT ON THE TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF MBE-GROWTH-INDUCED DEFECT LINES
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1986, 19 (20)
:L445-L446
[4]
GARBUZOV DZ, 1977, SOV PHYS SEMICOND+, V11, P419
[5]
KUIJPERS EPJ, 1975, J CRYST GROWTH, V31, P165, DOI 10.1016/0022-0248(75)90126-8
[9]
EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (12)
:L795-L797
[10]
EPITAXIAL-GROWTH OF HIGH-PURITY GAAS BY LOW-PRESSURE MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (02)
:L100-L102