NEGATIVE SPIN-ORBIT BOWING IN SEMICONDUCTOR ALLOYS

被引：34

作者：

WEI, SH

ZUNGER, A

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.39.6279

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6279 / 6282

页数：4

共 22 条

[1]

ALBERT C, 1972, PHYS REV B, V6, P1301

[2] ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].

BERNARD, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228

[3] EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS [J].

BEROLO, O ;

WOOLLEY, JC ;

VANVECHT.JA .

PHYSICAL REVIEW B, 1973, 8 (08) :3794-3798

[4]

BEROLO O, 1972, 11TH P INT C PHYS SE, P1420

[5]

CARDONA M, 1969, SOLID STATE PHYSIC S, V11

[6] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1977, 16 (02) :790-796

[7] SPIN-ORBIT-SPLITTING IN SEMICONDUCTOR ALLOYS [J].

HILL, R .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03) :516-520

[8] ORDERING IN GAAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY [J].

IHM, YE ;

OTSUKA, N ;

KLEM, J ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2013-2015

[9] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

JEN, HR ;

CHERNG, MJ ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1603-1605

[10] ELECTROREFLECTANCE AND WAVELENGTH MODULATION STUDY OF DIRECT AND INDIRECT FUNDAMENTAL TRANSITION REGION OF IN-1-XGAXP-1 [J].

LANGE, H ;

DONECKER, J ;

FRIEDRICH, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 73 (02) :633-639

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