A SUPERLATTICE GAAS/INGAAS-ON-GAAS PHOTODETECTOR FOR 1.3-MU-M APPLICATIONS

[1] BISCHOFF JC, 1988, J PHYS, V49

[2] BULMAN GE, 1986, J ELECTRON MATER, V16, P221

[3] DAS U, 1987, APPL PHYS LETT, V1, P1164

[4] GROWTH AND CHARACTERIZATION OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 620 - 624

[5] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379

[6] LOW-LEAKAGE INGAAS PHOTODIODES GROWN ON GAAS SUBSTRATES USING A GRADED STRAINED-LAYER SUPERLATTICE [J]. ELECTRONICS LETTERS, 1987, 23 (06) : 273 - 275

[7] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3366 - 3373

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5126 - 5128

[10] PLANAR MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55 MU-M WAVELENGTH APPLICATIONS USING GALNAS-GAAS HETEROEPITAXIES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 215 - 217

[1] BISCHOFF JC, 1988, J PHYS, V49

[2] BULMAN GE, 1986, J ELECTRON MATER, V16, P221

[3] DAS U, 1987, APPL PHYS LETT, V1, P1164

[4] GROWTH AND CHARACTERIZATION OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 620 - 624

[5] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379

[6] LOW-LEAKAGE INGAAS PHOTODIODES GROWN ON GAAS SUBSTRATES USING A GRADED STRAINED-LAYER SUPERLATTICE [J]. ELECTRONICS LETTERS, 1987, 23 (06) : 273 - 275

[7] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3366 - 3373

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5126 - 5128

[10] PLANAR MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55 MU-M WAVELENGTH APPLICATIONS USING GALNAS-GAAS HETEROEPITAXIES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 215 - 217