A SUPERLATTICE GAAS/INGAAS-ON-GAAS PHOTODETECTOR FOR 1.3-MU-M APPLICATIONS

被引：13

作者：

ZIRNGIBL, M

BISCHOFF, JC

THERON, D

ILEGEMS, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 07期

关键词：

D O I：

10.1109/55.29671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：336 / 338

页数：3

共 13 条

[1]

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[2]

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[3]

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[6] LOW-LEAKAGE INGAAS PHOTODIODES GROWN ON GAAS SUBSTRATES USING A GRADED STRAINED-LAYER SUPERLATTICE [J].

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[8] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

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[9] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J].

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PHYSICAL REVIEW B, 1983, 27 (08) :5126-5128

[10] PLANAR MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55 MU-M WAVELENGTH APPLICATIONS USING GALNAS-GAAS HETEROEPITAXIES [J].

RAZEGHI, M ;

RAMDANI, J ;

VERRIELE, H ;

DECOSTER, D ;

CONSTANT, M ;

VANBREMEERSCH, J .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :215-217

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