INTERFACIAL CHARGE MODIFICATION BETWEEN SIO2 AND SILICON

被引：3

作者：

ARONOWITZ, S ^{[1
]}

ZAPPE, HP ^{[1
]}

HU, C ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 14期

关键词：

D O I：

10.1063/1.101400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1317 / 1319

页数：3

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