INTERFACIAL CHARGE MODIFICATION BETWEEN SIO2 AND SILICON

被引：3
作者：
ARONOWITZ, S [1 ]
ZAPPE, HP [1 ]
HU, C [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN,BERKELEY,CA 94720
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 14期
关键词：
D O I：
10.1063/1.101400
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1317 / 1319
页数：3
相关论文
共 50 条
  • [21] ELECTROLYSIS OF SIO2 ON SILICON
    JORGENSE.PJ
    JOURNAL OF CHEMICAL PHYSICS, 1968, 49 (04) : 1594 - +
  • [22] Effect of surface modification of SiO2 particles on the interfacial and mechanical properties of PBS composites
    Hou, Hongbo
    Pu, Zejun
    Wang, Xu
    Zhu, Rongli
    Li, Xianyong
    Zhong, Jiachun
    POLYMER COMPOSITES, 2022, 43 (08) : 5087 - 5094
  • [23] DEFECTS AT THE SI/SIO2 INTERFACE OF SIO2 PRECIPITATES IN SILICON
    HOBBS, A
    BARKLIE, RC
    REESON, K
    HEMMENT, PLF
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 : 251 - 257
  • [24] Effect of interfacial silicon on the structural stability of C54-TiSi2 on SiO2
    Suh, D
    Kim, HS
    Kang, JY
    APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3697 - 3699
  • [25] Surface Modification of SiO2 for Highly Dispersed Pd/SiO2 Catalyst
    Kwon, Ji Soo
    Kim, Ji Sun
    Lee, Hak Sung
    Lee, Man Sig
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 19 (02) : 882 - 887
  • [26] Charge state of paramagnetic E′ centre in thermal SiO2 layers on silicon
    Afanas'ev, VV
    Stesmans, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (10) : 2285 - 2290
  • [27] CHARGE GENERATION AND BREAKDOWN IN SIO2
    TZOU, JJ
    YAO, CC
    CHEUNG, R
    CHAN, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C318 - C318
  • [28] A DLTS Study of SiO2 and SiO2/SiNx Surface Passivation of Silicon
    Simoen, E.
    Gong, C.
    Posthuma, N. E.
    Van Kerschaver, E.
    Poortmans, J.
    Mertens, R.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (06) : H612 - H617
  • [29] INFRARED OPTICAL-PROPERTIES OF SIO2 AND SIO2 LAYERS ON SILICON
    PHILIPP, HR
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 1053 - 1057
  • [30] Relationship between oxide density and charge trapping in SiO2 films
    Mrstik, BJ
    Afanas'ev, VV
    Stesmans, A
    McMarr, PJ
    Lawrence, RK
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6577 - 6588
12345