INTERFACIAL CHARGE MODIFICATION BETWEEN SIO2 AND SILICON

被引：3
作者：
ARONOWITZ, S [1 ]
ZAPPE, HP [1 ]
HU, C [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN,BERKELEY,CA 94720
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 14期
关键词：
D O I：
10.1063/1.101400
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1317 / 1319
页数：3
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