MAGNETORESISTIVITY OF HOT ELECTRONS IN SILICON

被引：14

作者：

ASCHE, M

BONDAR, VM

SARBEI, OG

机构：

[1] Institute of Physics, Academy of Sciences of the Ukrainian Ssr

来源：

PHYSICA STATUS SOLIDI | 1969年 / 31卷 / 02期

关键词：

D O I：

10.1002/pssb.19690310256

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：K143 / &

共 10 条

[1] PIEZOWIDERSTAND VON N-SILIZIUM IN ABHANGIGKEIT VON DER ELEKTRISCHEN FELDSTARKE [J].

ASCHE, M ;

BONDAR, WM ;

SARBEJ, OG .

PHYSICA STATUS SOLIDI, 1965, 11 (01) :255-+

[2] ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD [J].

ASCHE, M ;

BOITSCHE.BL ;

SARBEJ, OG .

PHYSICA STATUS SOLIDI, 1965, 9 (02) :323-&

[3]

ASCHE M, 1968, INT C PHYS SEMICOND

[4]

BUDD HF, 1965, PHYS REV, V140, P2170

[5] GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS AT HIGH ELECTRIC FIELDS [J].

CONWELL, EM .

PHYSICAL REVIEW, 1961, 123 (02) :454-&

[6]

MOVCHAN EA, TO BE PUBLISHED

[7]

MOVCHAN EA, 1969, FIZ TEKH POLUPROV, V3

[8] HOT-ELECTRON HALL MOBILITY AND MAGNETORESISTANCE OF N-TYPE GERMANIUM FOR ELECTRIC FIELD ALONG [100] DIRECTION [J].

NAG, BR ;

GUHA, S .

PHYSICS LETTERS A, 1968, A 26 (05) :172-&

[9] HOT-CARRIER MAGNETORESISTANCE [J].

NAG, BR ;

PARIA, H .

PHYSICAL REVIEW, 1966, 150 (02) :632-&

[10]

NAG BR, 1967, J APPL PHYS, P2425

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