THE CHARGE PUMPING METHOD - EXPERIMENT AND COMPLETE SIMULATION

被引：15

作者：

HOFMANN, F

HANSCH, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3092 / 3096

页数：5

共 9 条

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[3]

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[5] A SIMPLE TECHNIQUE FOR DETERMINING THE INTERFACE-TRAP DISTRIBUTION OF SUB-MICRON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY THE CHARGE PUMPING METHOD [J].

HOFMANN, F ;

KRAUTSCHNEIDER, WH .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) :1358-1360

[6]

POORTER T, 1984, 1984 IEDM, P100

[7] THE RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION - A COMPARATIVE-STUDY OF NORMAL-CHANNEL AND PARA-CHANNEL MOSFETS [J].

SCHWERIN, A ;

HANSCH, W ;

WEBER, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2493-2500

[8] MOS DEVICE MODELING AT 77-K [J].

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[9]

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