ELECTRONIC TRANSPORT IN DOPED A-GE AND A-SI PREPARED BY DC CATHODIC SPUTTERING

被引：0
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作者：
DONG, NV
HAI, TQ
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 88卷 / 02期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：555 / 561
页数：7
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