LATTICE-RELAXATION MECHANISM OF ZNSE LAYER GROWN ON A (100) GAAS SUBSTRATE TILTED TOWARD (011)

被引：35

作者：

OHKI, A

SHIBATA, N

ZEMBUTSU, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：694 / 698

页数：5

共 13 条

[1] GROWTH OF HIGH-QUALITY GAAS-LAYERS ON SI SUBSTRATES BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

UEDA, T ;

NISHI, S ;

KAMINISHI, K .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :490-497

[2] ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].

ASAI, H .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :425-433

[3] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].

BARTELS, WJ ;

NIJMAN, W .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525

[4] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE [J].

DEAN, PJ ;

PITT, AD ;

WRIGHT, PJ ;

YOUNG, ML ;

COCKAYNE, B .

PHYSICA B & C, 1983, 116 (1-3) :508-513

[5] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS [J].

DEAN, PJ .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02) :625-646

[6]

FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[7] ELASTIC-CONSTANTS OF ZNSE [J].

HODGINS, CG ;

IRWIN, JC .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 28 (02) :647-652

[8] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[9]

MITSUHASHI H, 1985, JPN J APPL PHYS, V24, P578

[10] LUMINESCENCE STUDIES OF INDIVIDUAL DISLOCATIONS IN II-VI (ZNSE) AND III-V (INP) SEMICONDUCTORS [J].

MYHAJLENKO, S ;

BATSTONE, JL ;

HUTCHINSON, HJ ;

STEEDS, JW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35) :6477-6492

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