G-FACTORS OF INTERACTING ELECTRONS IN SILICON INVERSION LAYERS

被引：46

作者：

SUZUKI, K ^{[1
]}

KAWAMOTO, Y ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT PHYS,TOYONAKA 560,JAPAN

来源：

关键词：

D O I：

10.1143/JPSJ.35.1456

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1456 / 1459

页数：4

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