RF POWER AND TEMPERATURE DEPENDENCES IN GD ALPHA-SI PRODUCED FROM HEATED SIH4

被引：7

作者：

HASEGAWA, S

KURATA, Y

IMAI, Y

NARIKAWA, S

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814149

中图分类号：

学科分类号：

摘要：

引用

页码：675 / 678

页数：4

共 8 条

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[7] POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE [J].

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[8] PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY [J].

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