MIS CAPACITANCE AND DERIVATIVE OF CAPACITANCE, WITH APPLICATION TO NONPARABOLIC BAND SEMICONDUCTORS

被引：16

作者：

MICHAEL, M ^{[1
]}

LEONARD, WF ^{[1
]}

机构：

[1] SO METHODIST UNIV,INST TECHNOL,DEPT ELECT ENGN,DALLAS,TX 75275

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 01期

关键词：

D O I：

10.1016/0038-1101(74)90115-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：71 / 85

页数：15

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