EPITAXIAL GROWTH OF SILICON FROM THE PYROLYSIS OF MONOSILANE ON SILICON SUBSTRATES

被引:94
作者
JOYCE, BA
BRADLEY, RR
机构
关键词
D O I
10.1149/1.2425632
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1235 / 1240
页数:6
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共 10 条
[1]  
BACKMAN PW, 1929, J PHYS CHEM, V33, P447
[2]   STUDY OF BACKGROUND STRUCTURE IN PLATINUM CARBON SHADOWING DEPOSITS [J].
BRADLEY, DE .
BRITISH JOURNAL OF APPLIED PHYSICS, 1960, 11 (11) :506-509
[3]  
CARROLL TJ, 1959, AD216523
[4]   EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J].
CHARIG, JM ;
JOYCE, BA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) :957-962
[5]   GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J].
CHARIG, JM ;
BICKNELL, RW ;
STIRLAND, DJ ;
JOYCE, BA .
PHILOSOPHICAL MAGAZINE, 1962, 7 (83) :1847-&
[6]   The thermal decomposition of silane [J].
Hogness, TR ;
Wilson, TL ;
Johnson, WC .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1936, 58 :108-112
[7]   THE HOT-WIRE PROCESS FOR ZIRCONIUM [J].
HOLDEN, RB ;
KOPELMAN, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1953, 100 (03) :120-125
[8]  
KAGDIS WA, 1962, MAY LOS ANG M EL SOC
[9]   PREPARATION OF HIGH-PURITY SILICON FROM SILANE [J].
LEWIS, CH ;
KELLY, HC ;
GIUSTO, MB ;
JOHNSON, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) :1114-1118
[10]  
Nomarski G., 1955, REV MET PARIS, V52, P121, DOI [10.1051/metal/195552020121, DOI 10.1051/METAL/195552020121]