DOUBLE-BEAM X-RAY RADIOGRAPHY SYSTEM FOR 3-DIMENSIONAL FLOW VISUALIZATION OF MOLTEN SILICON CONVECTION

被引:14
作者
WATANABE, M
EGUCHI, M
KAKIMOTO, K
HIBIYA, T
机构
[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 305
关键词
D O I
10.1016/0022-0248(93)90099-I
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A ''double-beam X-ray radiography system'' is developed for three-dimensional visualization of the flow of molten silicon convection during Czochralski crystal growth. The system contains two sets of X-ray sources and X-ray cameras set at right angles to each other. Tracers are tracked in three dimensions by stereoscopic photograph theory. The new system is described in detail and three-dimensionally visualized particle paths of molten silicon convection are presented. This visualization technique shows that the azimuthal flow direction of molten silicon strongly depends on the crucible and crystal rotations rates, and they can be categorized using the relationship between the crystal and crucible Reynolds numbers.
引用
收藏
页码:23 / 28
页数:6
相关论文
共 10 条
[1]   TOWARD AN INTEGRATED ANALYSIS OF CZOCHRALSKI GROWTH [J].
BROWN, RA ;
KINNEY, TA ;
SACKINGER, PA ;
BORNSIDE, DE .
JOURNAL OF CRYSTAL GROWTH, 1989, 97 (01) :99-115
[2]   NONMIXING CELLS DUE TO CRUCIBLE ROTATION DURING CZOCHRALSKI CRYSTAL GROWTH [J].
CARRUTHERS, JR ;
NASSAU, K .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5205-+
[3]   DIRECT OBSERVATION BY X-RAY RADIOGRAPHY OF CONVECTION OF MOLTEN SILICON IN THE CZOCHRALSKI GROWTH METHOD [J].
KAKIMOTO, K ;
EGUCHI, M ;
WATANABE, H ;
HIBIYA, T .
JOURNAL OF CRYSTAL GROWTH, 1988, 88 (03) :365-370
[4]   FLOW INSTABILITY OF MOLTEN SILICON IN THE CZOCHRALSKI CONFIGURATION [J].
KAKIMOTO, K ;
EGUCHI, M ;
WATANABE, H ;
HIBIYA, T .
JOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) :16-20
[5]   NUMERICAL-SIMULATION OF MOLTEN SILICON FLOW - COMPARISON WITH EXPERIMENT [J].
KAKIMOTO, K ;
NICODEME, P ;
LECOMTE, M ;
DUPRET, F ;
CROCHET, MJ .
JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) :715-725
[6]   NATURAL AND FORCED-CONVECTION OF MOLTEN SILICON DURING CZOCHRALSKI SINGLE-CRYSTAL GROWTH [J].
KAKIMOTO, K ;
EGUCHI, M ;
WATANABE, H ;
HIBIYA, T .
JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) :412-420
[7]  
KASAGI N, 1987, J FLOW VISUALIZATION, V7, P283
[8]  
KOBAYASHI N, 1981, J CRYST GROWTH, V49, P419
[9]   SIMULATIONS OF CZOCHRALSKI GROWTH ON CRYSTAL ROTATION RATE INFLUENCE IN FIXED CRUCIBLES [J].
SHIROKI, K .
JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :129-138
[10]  
WATANABE M, 1991, AM SOC MECH ENG, V128, P225