CHARACTERIZATION OF THE ELECTRICAL DAMAGE DUE TO POLYSILICON RIE (SF6+CL2 PLASMA) ETCHING

被引：3

作者：

CASTAN, E ^{[1
]}

DEDIOS, A ^{[1
]}

BAILON, L ^{[1
]}

BARBOLLA, J ^{[1
]}

CABRUJA, E ^{[1
]}

DOMINGUEZ, C ^{[1
]}

LORATAMAYO, E ^{[1
]}

机构：

[1] UNIV AUTONOMA BARCELONA,CTR NACL MICROELECTR,E-08193 BARCELONA,SPAIN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 01期

关键词：

D O I：

10.1149/1.2069168

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrically active damage generated by a polysilicon RIE (SF6 + Cl2 plasma) etching process has been characterized in polysilicon deposited on a 500 angstrom thick gate oxide by the C-V and DLTS techniques. The study was carried out by measuring the charge density in the oxide and the interface state density in metal oxide semiconductor capacitors for extreme values of the controllable RIE parameters. From the results obtained we conclude that this system does not generate any appreciable damage.

引用

页码：193 / 196

页数：4

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