GROWTH OF METALLIC INTERMEDIATE LAYER ON SI(111) BY SURFACE ELECTRO-MIGRATION

被引：4
作者：
NATORI, A
OHTA, S
YASUOKA, T
YASUNAGA, H
机构：
[1] The University of Electro-Communications, Chofu, Tokyo
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1016/0749-6036(90)90079-M
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The structural change of a thin film patch by surface electro-migration is investigated in a computer simulation with use of the lattice gas model. The temperature dependence of the growth velocity of an intermediate layer, AC effect and evaporation effect are studied. The characteristic morphological change of a thin film patch is explained by two factors; the interplay between emission and capture of single atoms at islands or layer edges on an intermediate layer, and the competition between the drift and diffusion fluxes. The numerical results explain the observed behaviour for In/Si(111) and Ag/Si(111). © 1990.
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页码：145 / 150
页数：6
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