共 50 条
- [1] Behavior of excess arsenic in undoped, semi-insulating GaAs during ingot annealing Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (12 A):
- [2] STRIATIONS IN UNDOPED SEMI-INSULATING LEC GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (01): : L65 - L68
- [3] GROWTH OF SEMI-INSULATING GaAs SINGLE CRYSTAL BY LEC METHOD. Reports of the Electrical Communication Laboratory, 1985, 33 (01): : 146 - 155
- [4] GROWTH OF SEMI-INSULATING GAAS SINGLE-CRYSTAL BY LEC METHOD REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1985, 33 (01): : 146 - 155
- [6] Defects in neutron irradiated, LEC semi-insulating GaAs DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1039 - 1044
- [7] THE ROLE OF CARBON IN THE COMPENSATION OF SEMI-INSULATING LEC GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 195 - 200
- [8] ANNEALING AND THERMAL CYCLING EFFECTS IN SEMI-INSULATING GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 1 - 10
- [9] ON THE ORIGIN OF DEFECTS IN SEMI-INSULATING LEC-GROWN GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 499 - 504
- [10] Defect generation by proton irradiation of semi-insulating LEC GaAs MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, 1999, 540 : 73 - 78