ADSORPTION OF CO ON PLANAR AND OXYGEN-ETCHED SILICON SURFACES

被引：28

作者：

DYLLA, HF

KING, JG

CARDILLO, MJ

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

[2] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[3] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SURFACE SCIENCE | 1978年 / 74卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90277-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：141 / 167

页数：27

共 25 条

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[8] CHEMISORPTION AND INCORPORATION OF OXYGEN AT A NICKEL SURFACE [J].

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[9]

DYLLA HF, 1975, THESIS MIT

[10] PEAK WIDTHS OF ELEMENTARY FIRST AND 2ND ORDER DESORPTION TRANSIENTS [J].

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SURFACE SCIENCE, 1976, 54 (01) :1-5

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