SILICON-ON-SAPPHIRE WITH MICROSECOND CARRIER LIFETIMES

被引：10

作者：

SCHRODER, DK ^{[1
]}

RAICHOUD.P ^{[1
]}

机构：

[1] WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 09期

关键词：

D O I：

10.1063/1.1654710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：455 / 457

页数：3

共 13 条

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[4]

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[5]

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (11) :1580-+

[8] USE OF HCI GETTERING IN SILICON DEVICE PROCESSING [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :141-+

[9] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES [J].

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[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

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