SILICON-ON-SAPPHIRE WITH MICROSECOND CARRIER LIFETIMES

被引：10

作者：

SCHRODER, DK ^{[1
]}

RAICHOUD.P ^{[1
]}

机构：

[1] WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 09期

关键词：

D O I：

10.1063/1.1654710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：455 / 457

页数：3

共 50 条

[1] CARRIER MOBILITY IN LASER-ANNEALED SILICON-ON-SAPPHIRE FILMS
MABY, EW
WU, CP
RCA REVIEW, 1981, 42 (01): : 118 - 124
[2] On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures
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Belova, N. E.
Demakov, K. D.
Shemardov, S. G.
SEMICONDUCTORS, 2015, 49 (08) : 1099 - 1103
[3] On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures
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Semiconductors, 2015, 49 : 1099 - 1103
[4] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND CARRIER CONCENTRATION IN SILICON-ON-SAPPHIRE FILMS
DUMIN, DJ
ROSS, EC
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3139 - &
[5] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE
DUMIN, DJ
SILVER, RS
SOLID-STATE ELECTRONICS, 1968, 11 (03) : 353 - +
[6] RADIATION HARDENED SILICON-ON-SAPPHIRE
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VELORIC, H
ELECTRONIC ENGINEERING, 1984, 56 (685): : 61 - 62
[7] SILICON-ON-SAPPHIRE BIPOLAR TRANSISTORS
HEIMAN, FP
ROBINSON, PH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 433 - &
[8] THE ROUGHNESS OF HETEROEPITAXIAL SILICON-ON-SAPPHIRE
SPINK, M
THOMAS, CB
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (11) : 1123 - 1125
[9] TEMPERATURE-DEPENDENCE OF THE PICOSECOND CARRIER RELAXATION IN SILICON-IRRADIATED SILICON-ON-SAPPHIRE FILMS
PFEIFFER, T
KUHL, J
GOBEL, EO
PALMETSHOFER, L
JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1850 - 1855
[10] Silicon-on-Sapphire (SOS) Technology.
Schwob, P.
Bulletin de l'Association Suisse des Electriciens, 1977, 68 (02): : 60 - 65

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