ELECTRICAL CHARACTERISTICS OF MOS STRUCTURES ON LESS THAN 111 GREATER THAN AND LESS THAN 100 GREATER THAN ORIENTED N-TYPE SILICON AS INFLUENCED BY USE OF HYDROGEN-CHLORIDE DURING THERMAL OXIDATION

被引：16

作者：

BACCARANI, G

SEVERI, M

SONCINI, G

机构：

[1] UNIV BOLOGNA, FAC INGN, IST ELETTR, BOLOGNA, ITALY

[2] CONSIGLIO NAZL RICERCHE, LAB LAMEL, BOLOGNA, ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 10期

关键词：

D O I：

10.1149/1.2403278

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1436 / 1438

页数：3

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