PHOTOLUMINESCENCE AND THE BAND-STRUCTURE OF INASSB STRAINED-LAYER SUPERLATTICES

被引:44
作者
KURTZ, SR
OSBOURN, GC
BIEFELD, RM
LEE, SR
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10.1063/1.100135
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O59 [应用物理学];
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页码:216 / 218
页数:3
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共 14 条
[1]   ELECTRONIC STATES IN SEMICONDUCTOR HETEROSTRUCTURES [J].
BASTARD, G ;
BRUM, JA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1625-1644
[2]   PROBING SEMICONDUCTOR SEMICONDUCTOR INTERFACES [J].
BAUER, RS ;
MARGARITONDO, G .
PHYSICS TODAY, 1987, 40 (01) :27-34
[3]  
BIEFELD RM, IN PRESS J CRYST GRO
[4]   ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].
CARDONA, M ;
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194
[5]  
KEYES RW, 1968, SEMICONDUCTORS SEMIM, V4
[6]   EXTENDED INFRARED RESPONSE OF INASSB STRAINED-LAYER SUPERLATTICES [J].
KURTZ, SR ;
OSBOURN, GC ;
BIEFELD, RM ;
DAWSON, LR ;
STEIN, HJ .
APPLIED PHYSICS LETTERS, 1988, 52 (10) :831-833
[7]   VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].
LAWAETZ, P .
PHYSICAL REVIEW B, 1971, 4 (10) :3460-&
[8]   INASSB STRAINED-LAYER SUPERLATTICES FOR LONG WAVELENGTH DETECTOR APPLICATIONS [J].
OSBOURN, GC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :176-178
[9]   DEVELOPMENTS IN HIGH-PRESSURE PHYSICS [J].
PITT, GD .
CONTEMPORARY PHYSICS, 1977, 18 (02) :137-164
[10]   BAND LINEUPS AT II-VI HETEROJUNCTIONS - FAILURE OF THE COMMON-ANION RULE [J].
TERSOFF, J .
PHYSICAL REVIEW LETTERS, 1986, 56 (25) :2755-2758