EQUAL RATE AND ANISOTROPIC REACTIVE ION ETCHING OF GAAS/ALGAAS HETEROSTRUCTURES IN SICL4 PLASMA

被引：18

作者：

SALIMIAN, S

COOPER, CB

机构：

[1] Varian Research Cent, United States

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 08期

关键词：

11;

D O I：

10.1149/1.2097394

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2420 / 2423

页数：4

共 11 条

[1] GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J].

ASAKAWA, K ;

SUGATA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L653-L655

[2] THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS [J].

DANNER, DA ;

HESS, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) :151-155

[3] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J].

DONNELLY, VM ;

FLAMM, DL ;

TU, CW ;

IBBOTSON, DE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2533-2537

[4]

DZIOBA S, 1984, OCT EL SOC NEW ORL, V842, P506

[5]

Hess D.W., 1982, PLASMA CHEM PLASMA P, V2, P141, DOI [10.1007/BF00633130, DOI 10.1007/BF00633130]

[6]

Holliday AK, 1973, COMPREHENSIVE INORGA

[7]

Kubaschewski O., 1979, METALLURGICAL THERMO

[8] ORIENTATION DEPENDENT REACTIVE ION ETCHING OF GAAS IN SICL4 [J].

LI, JZ ;

ADESIDA, I ;

WOLF, ED .

APPLIED PHYSICS LETTERS, 1984, 45 (08) :897-899

[9] CHEMICAL ETCHING OF GAAS AND INP BY CHLORINE - THE THERMODYNAMICALLY PREDICTED DEPENDENCE ON CL2 PRESSURE AND TEMPERATURE [J].

MCNEVIN, SC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05) :1216-1226

[10] NONSELECTIVE ETCHING OF GAAS ALGAAS DOUBLE HETEROSTRUCTURE LASER FACETS BY CL-2 REACTIVE ION ETCHING IN A LOAD-LOCKED SYSTEM [J].

VAWTER, GA ;

COLDREN, LA ;

MERZ, JL ;

HU, EL .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :719-721

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