共 50 条
- [41] POSITRON-ANNIHILATION INVESTIGATION OF DEFECTS IN SILICON SINGLE-CRYSTALS IRRADIATED WITH XENON IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (02): : 202 - 205
- [42] EFFECT OF IMPURITIES AND INHERENT DEFECTS ON THE PHYSICOMECHANICAL PROPERTIES OF SILICON-CARBIDE SINGLE-CRYSTALS FIZIKA TVERDOGO TELA, 1992, 34 (09): : 2748 - 2752
- [43] LATTICE DEFECTS IN ANNEALED GAAS SINGLE-CRYSTALS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (12): : 1578 - 1578
- [44] EPR STUDY OF DEFECTS IN ZNS SINGLE-CRYSTALS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1975, (08): : 143 - 144
- [47] RADIATION DEFECTS IN SINGLE-CRYSTALS OF ZINC DIPHOSPHIDE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02): : K191 - K193
- [50] THE SI-H BONDS AND H-INDUCED DEFECTS IN SINGLE-CRYSTALS OF SILICON SCIENTIA SINICA SERIES A-MATHEMATICAL PHYSICAL ASTRONOMICAL & TECHNICAL SCIENCES, 1984, 27 (02): : 213 - 224