BACKGROUND DOPING DEPENDENCE OF SILICON DIFFUSION IN P-TYPE GAAS

被引：59

作者：

DEPPE, DG ^{[1
]}

HOLONYAK, N ^{[1
]}

KISH, FA ^{[1
]}

BAKER, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.97958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：998 / 1000

页数：3

共 13 条

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[7]

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