ELECTRON-BEAM ENHANCED GROWTH OF CVD-DEPOSITED SILICON ON ALUMINA

被引:6
作者
HEINEMANN, K
OSAKA, T
机构
关键词
D O I
10.1016/0022-0248(82)90369-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:485 / 498
页数:14
相关论文
共 30 条
[1]   EARLY GROWTH OF SILICON ON SAPPHIRE .1. TRANSMISSION ELECTRON MICROSOPY [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ ;
SMITH, RT ;
CORBOY, JF ;
BLANC, J ;
CULLEN, GW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5139-5150
[2]   FORMATION OF STRUCTURE IN POLYSILICON FILMS [J].
ALEKSANDROV, LN ;
EDELMAN, FL ;
VOSKOBOINIKOV, VV .
THIN SOLID FILMS, 1976, 32 (02) :241-245
[3]  
ANTON R, 1981, 39TH P EMSA M BAT RO, P218
[4]  
ANTON R, 1980, 38TH P ANN EMSA M SA, P402
[5]   COALESCENCE BEHAVIOR OF GOLD PARTICLES VACUUM EVAPORATED ONTO DOPED ALKALI-HALIDE SUBSTRATES [J].
BIRJEGA, MI ;
POPESCUPOGRION, N ;
TEODORESCU, V ;
TOPA, V .
THIN SOLID FILMS, 1979, 57 (02) :263-269
[6]   EARLY GROWTH OF SILICON ON SAPPHIRE .2. MODELS [J].
BLANC, J ;
ABRAHAMS, MS .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5151-5160
[7]  
CAREY K, 1981, THESIS STANFORD U
[8]   SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS [J].
CHANG, CC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03) :500-&
[9]   STRUCTURE OF SMALL, VAPOR-DEPOSITED PARTICLES .1. EXPERIMENTAL-STUDY OF SINGLE-CRYSTALS AND PARTICLES WITH PENTAGONAL PROFILES [J].
HEINEMANN, K ;
YACAMAN, MJ ;
YANG, CY ;
POPPA, H .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (02) :177-186
[10]   NUCLEATION, GROWTH, AND POST-DEPOSITION THERMALLY INDUCED EPITAXY OF GOLD ON SAPPHIRE [J].
HEINEMANN, K ;
KIM, HK ;
POPPA, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :622-624