PARTIAL DISLOCATIONS, COLUMNAR GROWTH, CLUSTERING, AND PINHOLE FORMATION IN ULTRATHIN FILM SEMICONDUCTOR HETEROSTRUCTURES

被引：38
作者：
PHILLIPS, JC
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词：
D O I：
10.1116/1.571123
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：545 / 550
页数：6
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共 43 条
[1]   EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].
ANDERSON, RL .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&
[2]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[3]   GROWTH OF HIGH-QUALITY EPITAXIAL GAAS FILMS BY SPUTTER DEPOSITION [J].
BARNETT, SA ;
BAJOR, G ;
GREENE, JE .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :734-737
[4]  
CASEY HC, 1978, HETEROSTRUCTURE LA B, P87
[5]   BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843
[6]  
CHO AY, COMMUNICATION
[7]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[8]  
DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[9]   X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].
FLEMING, RM ;
MCWHAN, DB ;
GOSSARD, AC ;
WIEGMANN, W ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363
[10]   ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225
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