CONTROLLING THRESHOLD AND DIRECTION OF STIMULATED BRILLOUIN SCATTERING IN PIEZOELECTRIC SEMICONDUCTORS

被引：6

作者：

CARLSON, DG

机构：

[1] IBM Watson Research Center, Yorktown Heights, N. Y.

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1969年 / QE 5卷 / 06期

关键词：

D O I：

10.1109/JQE.1969.1082046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

When an electrostatic field induces net acoustic gain in a piezoelectric semiconductor, the threshold for stimulated Brillouin scattering decreases exponentially with acoustic gain. The threshold can be lowest for acoustic waves in the field direction, resulting in control over the direction of stimulated Brillouin scattering. Copyright © 1969, by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：300 / &

共 5 条

[1] NONELECTRONIC ULTRASONIC ATTENUATION IN CDS [J].