NON-ALLOYED GE/PD OHMIC CONTACT FOR GAAS-MESFETS

被引：7

作者：

PACCAGNELLA, A

CANALI, C

DONZELLI, G

ZANONI, E

ZANETTI, R

LAU, SS

机构：

[1] UNIV PADUA,DIPARTIMENTO ELETTR & INFORMAT,I-35131 PADUA,ITALY

[2] TELETTRA SPA,I-20059 VIMERCATE,ITALY

[3] UNIV BARI,DEPT ELETTR & ELETTROTECN,I-70125 BARI,ITALY

[4] UNIV CALIF SAN DIEGO,DEPT ELECT ENGN & COMP SCI,LA JOLLA,CA 92093

来源：

JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期

关键词：

D O I：

10.1051/jphyscol:1988493

中图分类号：

学科分类号：

摘要：

引用

页码：441 / 444

页数：4

共 8 条

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[4] NON-ALLOYED OHMIC CONTACT TO NORMAL-GAAS BY SOLID-PHASE EPITAXY [J].

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[5]

PACCAGNELLA A, 1987, 17TH P ESSDERC, P605

[6]

SAWADA T, 1986, MAT RES SOC S P, V54, P409

[7] EFFECTS OF INTERFACIAL MICROSTRUCTURE ON UNIFORMITY AND THERMAL-STABILITY OF AUNIGE OHMIC CONTACT TO N-TYPE GAAS [J].

SHIH, YC ;

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CALLEGARI, AC .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :582-590

[8] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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DEVLIN, J .

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