INSITU ARSENIC DOPING OF EPITAXIAL SILICON AT 800-DEGREES-C BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：16

作者：

COMFORT, JH

REIF, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 19期

关键词：

D O I：

10.1063/1.98627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1536 / 1538

页数：3

共 8 条

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[5] P-DOPED POLYSILICON FILM GROWTH TECHNOLOGY [J].

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[6] PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .1. PROCESS CHARACTERIZATION [J].

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[7]

MEYERSON BS, 1986, J ELECTROCHEM SOC, V133, P1236

[8] EFFECT OF SI-GE BUFFER LAYER FOR LOW-TEMPERATURE SI EPITAXIAL-GROWTH ON SI SUBSTRATE BY RF PLASMA CHEMICAL VAPOR-DEPOSITION [J].

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ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1466-1470

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