INTERFACIAL REACTIONS IN THE SIO2/RU AND SIO2/RU/AL-SI STRUCTURES

被引：7

作者：

WANG, SQ ^{[1
]}

HONG, S ^{[1
]}

WHITE, A ^{[1
]}

HOENER, C ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CORNELL UNIV,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.359220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interfacial reactions in the structures of Si/SiO2 (500 nm)/Ru (65 nm) (up to 950°C) and Si/SiO2 (500 nm)/Ru (72 nm)/Al-0.8 wt % Si (630 nm) (up to 700°C), were studied by Rutherford backscattering spectrometry, Auger electron spectroscopy, x-ray diffractometry, selected-area electron diffraction, energy-dispersive x-ray spectroscopy, scanning electron microscopy, and transmission electron microscopy. A thin film of Ru was stable on a SiO2 substrate up to 30 min in a vacuum anneal at 950°C. In vacuum, a fast interfacial reaction between the Ru thin film and the Al-Si overlayer started between 550 and 575°C, resulting in the formation of a Si/SiO2/ RuAl2/(Ru4Al 13)Al-Si layer sequence. Similar to the reactions between Pt group metals and Al, the Ru/Al reaction is nonuniform. It is controlled by a nucleation mechanism and is accompanied by void formation. © 1995 American Institute of Physics.

引用

页码：5751 / 5762

页数：12

共 37 条

[1] PHASE-EQUILIBRIA FOR THE ALUMINUM-RICH REGION OF THE AL-RU SYSTEM [J].